Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Transistor Polarity
: P-Channel
Packaging
: Tube
Drain-Source Breakdown Voltage
: - 60 V
Continuous Drain Current
: 38 A
Gate-Source Breakdown Voltage
: +/- 25 V
Package / Case
: TO-3PF
Resistance Drain-Source RDS (on)
: 0.026 Ohms
Features: * -38A, -60V, RDS(on) = 0.026 @VGS = -10 V
* Low gate charge ( typical 84 nC)
* Low Crss ( typical 320 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature ratingSpecifications
|
Symbol |
Parameter |
FQAF65N06 |
Units |
|
VDSS |
Drain-Source Voltage |
-60 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
-38 |
A |
|
-26.8 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
-152 |
A |
|
VGSS |
Gate-Source Voltage |
± 25 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
820 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
-38 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
10 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
-7.0 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
100 |
W |
|
0.67 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+175 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
|
Description These P-Channel enhancement mode power FQAF47P06 field effect transistors are produced using Fairchild's proprietary,planar stripe, DMOS technology.
This advanced technology FQAF47P06 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. FQAF47P06 is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
Parameters: | Technical/Catalog Information | FQAF47P06 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 38A |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 19A, 10V |
| Input Capacitance (Ciss) @ Vds | 3600pF @ 25V |
| Power - Max | 100W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| Package / Case | TO-3PF |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQAF47P06
FQAF47P06
|
FQAF47P06 Data Sheet
