Transistor Polarity
: N-Channel
Continuous Drain Current
: 33 A
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Drain-Source Breakdown Voltage
: 100 V
Mounting Style
: Through Hole
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 25 V
Resistance Drain-Source RDS (on)
: 0.039 Ohms
Package / Case
: TO-3PF
Features: * 33A, 100V, R DS(on) = 0.039 @VGS = 10 V
* Low gate charge ( typical 48 nC)
* Low Crss ( typical 85 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating Specifications
|
Symbol |
Parameter |
FQAF44N10 |
Units |
|
VDSS |
Drain-Source Voltage |
100 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
33 |
A |
|
23.3 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
132 |
A |
|
VGSS |
Gate-Source Voltage |
± 25 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
530 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
33 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
8.5 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
6.0 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
85 |
W |
|
0.57 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power FQAF44N10 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQAF44N10 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQAF44N10 is well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQAF44N10 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 33A |
| Rds On (Max) @ Id, Vgs | 39 mOhm @ 16.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1800pF @ 25V |
| Power - Max | 85W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 62nC @ 10V |
| Package / Case | TO-3PF |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQAF44N10
FQAF44N10
|
FQAF44N10 Data Sheet
