FQAF44N08

MOSFET 80V N-Channel QFET

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SeekIC No. : 00151937 Detail

FQAF44N08: MOSFET 80V N-Channel QFET

floor Price/Ceiling Price

US $ .76~1.6 / Piece | Get Latest Price
Part Number:
FQAF44N08
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.6
  • $1.33
  • $.95
  • $.76
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 35.6 A
Resistance Drain-Source RDS (on) : 0.034 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3PF Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 80 V
Gate-Source Breakdown Voltage : +/- 25 V
Package / Case : TO-3PF
Resistance Drain-Source RDS (on) : 0.034 Ohms
Continuous Drain Current : 35.6 A


Features:

• 35.6A, 80V, RDS(on) = 0.034Ω @VGS = 10 V
• Low gate charge ( typical 38 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating



Specifications

Symbol Parameter
FQAF44N08
Units
VDSS Drain-Source Voltage
80
V
ID Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C)
35.6
A
25.2
A
IDM Drain Current - Pulsed (Note 1)
142.4
A
VGSS Gate-Source Voltage
±25
V
EAS Single Pulsed Avalanche Energy (Note 2)
450
mJ
IAR Avalanche Current (Note 1)
35.6
A
EAR Repetitive Avalanche Energy (Note 1)
8.3
mJ
dv/dt Peak Diode Recovery dv/dt (Note 3)
6.5
V/ns
PD Power Dissipation (TC = 25°C)
- Derate above 25°C
83
W
0.56
W/°C
TJ, TSTG Operating and Storage Temperature Range
-55to+175
°C
TL Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
300
°C



Description

These N-Channel enhancement mode power FQAF44N08 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

This advanced technology FQAF44N08 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQAF44N08 is well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control.




Parameters:

Technical/Catalog InformationFQAF44N08
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)80V
Current - Continuous Drain (Id) @ 25° C35.6A
Rds On (Max) @ Id, Vgs34 mOhm @ 17.8A, 10V
Input Capacitance (Ciss) @ Vds 1430pF @ 25V
Power - Max83W
PackagingTube
Gate Charge (Qg) @ Vgs50nC @ 10V
Package / CaseTO-3PF
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQAF44N08
FQAF44N08



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