FQAF40N25

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 24 A
Resistance Drain-Source RDS (on) : 0.07 Ohms
Package / Case : TO-3PF


Features:

* 24A, 250V, R_DS(on) = 0.07 @V_GS  = 10 V
* Low gate charge ( typical  85 nC)
* Low Crss ( typical  70 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability  


Specifications

Symbol	Parameter	FQAF40N25	Units
VDSS	Drain-Source Voltage	250	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	24	A
		15	A
IDM	Drain Current - Pulsed             (Note 1)	96	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	800	mJ
IAR	Avalanche Current                   (Note 1)	24	A
EAR	Repetitive Avalanche Energy         (Note 1)	10.8	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	5.5	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	108	W
		0.86	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQAF40N25 field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
    This advanced technology FQAF40N25 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQAF40N25 is well suited for high efficiency switching DC/DC converters and switch mode power supplies. 


Parameters:

Technical/Catalog Information	FQAF40N25
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25° C	24A
Rds On (Max) @ Id, Vgs	70 mOhm @ 12A, 10V
Input Capacitance (Ciss) @ Vds	4000pF @ 25V
Power - Max	108W
Packaging	Tube
Gate Charge (Qg) @ Vgs	110nC @ 10V
Package / Case	TO-3PF
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQAF40N25 FQAF40N25