FQAF34N20L

Packaging :
Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.075 Ohms
Package / Case : TO-3PF


Features:

* 23A, 200V,, R _DS(on) = 0.075  @V_GS  = 10 V
* Low gate charge ( typical 55 nC)
* Low Crss ( typical  52 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating 
* Low level gate drive requirement allowing direct
   operation from logic drivers


Specifications

Symbol	Parameter	FQAF34N20L	Units
VDSS	Drain-Source Voltage	200	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	23	A
		14.5	A
IDM	Drain Current - Pulsed             (Note 1)	92	A
VGSS	Gate-Source Voltage	± 20	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	640	mJ
IAR	Avalanche Current                   (Note 1)	23	A
EAR	Repetitive Avalanche Energy         (Note 1)	9.5	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	5.5	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	95	W
		0.76	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+175
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQAF34N20L field effect transistors are produced using Fairchild`s proprietary, planar stripe,DMOS technology.
    This advanced technology FQAF34N20L has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.FQAF34N20L is well suited for high efficiency switching for DC/DC conventers,swithch mode supply.motor control.