FQAF34N20

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 23 A
Resistance Drain-Source RDS (on) : 0.075 Ohms
Package / Case : TO-3PF


Features:

* 23A, 200V, R_DS(on)  = 0.075  @V_GS  = 10 V
* Low gate charge ( typical 60 nC)
* Low Crss ( typical  55 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability



Specifications

Symbol	Parameter	FQAF34N20	Units
VDSS	Drain-Source Voltage	200	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	23	A
		14.5	A
IDM	Drain Current - Pulsed             (Note 1)	92	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	640	mJ
IAR	Avalanche Current                   (Note 1)	23	A
EAR	Repetitive Avalanche Energy         (Note 1)	9.5	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	5.5	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	95	W
		0.76	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQAF34N20 field effect transistors are produced using Fairchild`s proprietary, planar stripe, DMOS technology.

    This advanced technology FQAF34N20 has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.FQAF34N20 is well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.