FQAF27N25

Features:

* 19A, 250V, R_DS(on) = 0.11 @V_GS  = 10 V
* Low gate charge ( typical  50 nC)
* Low Crss ( typical  45 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability  


Specifications

Symbol	Parameter	FQAF27N25	Units
VDSS	Drain-Source Voltage	250	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	19	A
		12	A
IDM	Drain Current - Pulsed             (Note 1)	76	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	600	mJ
IAR	Avalanche Current                   (Note 1)	19	A
EAR	Repetitive Avalanche Energy         (Note 1)	9.5	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	5.5	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	95	W
		0.76	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQAF27N25 field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology.
    This advanced technology FQAF27N25 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQAF27N25 is well suited for high efficiency switching DC/DC converters and switch mode power supplies.