Transistor Polarity
: N-Channel
Gate-Source Breakdown Voltage
: +/- 20 V
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 200 V
Continuous Drain Current
: 16 A
Resistance Drain-Source RDS (on)
: 0.11 Ohms
Package / Case
: TO-3PF
Features: * 16A, 200V, R DS(on) = 0.14 @VGS = 10 V
* Low gate charge ( typical 27 nC)
* Low Crss ( typical 30 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating * Low level gate drive requirement allowing direct
operation from logic driversSpecifications
|
Symbol |
Parameter |
FQAF19N20L |
Units |
|
VDSS |
Drain-Source Voltage |
200 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
16 |
A |
|
10.1 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
64 |
A |
|
VGSS |
Gate-Source Voltage |
± 20 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
250 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
16 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
8.5 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
85 |
W |
|
0.68 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+175 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power FQAF19N20L field effect transistors are produced using Fairchild`s proprietary, planar stripe,DMOS technology.
This advanced technology FQAF19N20L has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.FQAF19N20L is well suited for high efficiency switching for DC/DC conventers,swithch mode supply.motor control.
Parameters: | Technical/Catalog Information | FQAF19N20L |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 16A |
| Rds On (Max) @ Id, Vgs | 140 mOhm @ 8A, 10V |
| Input Capacitance (Ciss) @ Vds | 2200pF @ 25V |
| Power - Max | 85W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 35nC @ 5V |
| Package / Case | TO-3PF |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQAF19N20L
FQAF19N20L
|
FQAF19N20L Data Sheet
