Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Gate-Source Breakdown Voltage
: +/- 30 V
Continuous Drain Current
: 8 A
Resistance Drain-Source RDS (on)
: 0.75 Ohms
Drain-Source Breakdown Voltage
: 800 V
Package / Case
: TO-3PF
Features: • 8.0A, 800V, RDS(on) = 0.75Ω @VGS = 10 V
• Low gate charge ( typical 68 nC)
• Low Crss ( typical 30 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capabilitySpecifications
| Symbol |
Parameter |
FQAF13N80 |
Units |
| VDSS |
Drain-Source Voltage |
800 |
V |
| ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
8.0 |
A |
|
5.1 |
A |
| IDM |
Drain Current - Pulsed (Note 1) |
32 |
A |
| VGSS |
Gate-Source Voltage |
±30 |
V |
| EAS |
Single Pulsed Avalanche Energy (Note 2) |
1100 |
mJ |
| IAR |
Avalanche Current (Note 1) |
8.0 |
A |
| EAR |
Repetitive Avalanche Energy (Note 1) |
12 |
mJ |
| dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
4.0 |
V/ns |
| PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
120 |
W |
|
0.96 |
W/°C |
| TJ, TSTG |
Operating and Storage Temperature Range |
-55to+150 |
°C |
| TL |
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds |
300 |
°C |
DescriptionThese N-Channel enhancement mode power FQAF13N80 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQAF13N80 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQAF13N80 is well suited for high efficiency switch mode power supplies.
Parameters: | Technical/Catalog Information | FQAF13N80 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25° C | 8A |
| Rds On (Max) @ Id, Vgs | 750 mOhm @ 4A, 10V |
| Input Capacitance (Ciss) @ Vds | 3500pF @ 25V |
| Power - Max | 120W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 88nC @ 10V |
| Package / Case | TO-3PF |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQAF13N80
FQAF13N80
|
FQAF13N80 Data Sheet
