FQAF13N50

Packaging :
Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 0.43 Ohms
Package / Case : TO-3PF
Continuous Drain Current : 9.6 A


Features:

* 9.6A, 500V, R_DS(on)  = 0.43  @V_GS  = 10 V
* Low gate charge ( typical 45 nC)
* Low Crss ( typical  25 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability


Specifications

Symbol	Parameter	FQAF13N50	Units
VDSS	Drain-Source Voltage	500	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	9.6	A
		6.1	A
IDM	Drain Current - Pulsed             (Note 1)	38.4	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	810	mJ
IAR	Avalanche Current                   (Note 1)	9.6	A
EAR	Repetitive Avalanche Energy         (Note 1)	10	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	4.5	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	100	W
		0.8	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQAF13N50 field effect transistors are produced using Fairchild`s proprietary,planar stripe,DMOS technology.

    This advanced technology FQAF13N50 has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.FQAF13N50 is well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.