Configuration
: Single
Mounting Style
: Through Hole
Transistor Polarity
: P-Channel
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Continuous Drain Current
: 11.5 A
Gate-Source Breakdown Voltage
: +/- 30 V
Resistance Drain-Source RDS (on)
: 0.47 Ohms
Package / Case
: TO-3PF
Drain-Source Breakdown Voltage
: - 200 V
Features: * -11.5A, -200V, RDS(on) = 0.47 @VGS = 10 V
* Low gate charge ( typical 31 nC)
* Low Crss ( typical 30 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
Specifications
|
Symbol |
Parameter |
FQAF12P20 |
Units |
|
VDSS |
Drain-Source Voltage |
-200 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
-8.6 |
A |
|
-5.4 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
-34.4 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
810 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
-8.6 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
7.0 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
-5.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
70 |
W |
|
0.56 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
|
Description These P-Channel enhancement mode power FQAF12P20 field effect transistors are produced using Fairchild`s proprietary, planar stripe, DMOS technology.
This advanced technology FQAF12P20 has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.FQAF12P20 is well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.
Parameters: | Technical/Catalog Information | FQAF12P20 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 8.6A |
| Rds On (Max) @ Id, Vgs | 470 mOhm @ 4.3A, 10V |
| Input Capacitance (Ciss) @ Vds | 1200pF @ 25V |
| Power - Max | 70W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V |
| Package / Case | TO-3PF |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQAF12P20
FQAF12P20
|
FQAF12P20 Data Sheet
