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FQA38N30

MOSFET 300V N-Channel QFET

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SeekIC No. : 00162438 Detail

FQA38N30: MOSFET 300V N-Channel QFET

FQA38N30 Data Sheet

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Part Number:
FQA38N30
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 300 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 38.4 A
Resistance Drain-Source RDS (on) : 0.085 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-3PN Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-3PN
Resistance Drain-Source RDS (on) : 0.085 Ohms
Drain-Source Breakdown Voltage : 300 V
Continuous Drain Current : 38.4 A


Parameters:

Technical/Catalog InformationFQA38N30
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)300V
Current - Continuous Drain (Id) @ 25° C38.4A
Rds On (Max) @ Id, Vgs85 mOhm @ 19.2A, 10V
Input Capacitance (Ciss) @ Vds 4400pF @ 25V
Power - Max290W
PackagingTube
Gate Charge (Qg) @ Vgs120nC @ 10V
Package / CaseTO-3PN
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA38N30
FQA38N30



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