FQA36P15

MOSFET 150V P-Channel QFET

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SeekIC No. : 00146575 Detail

FQA36P15: MOSFET 150V P-Channel QFET

floor Price/Ceiling Price

US $ 1.13~1.58 / Piece | Get Latest Price
Part Number:
FQA36P15
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $1.58
  • $1.42
  • $1.27
  • $1.13
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 150 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.09 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3PN Packaging : Tube    

Description

Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 36 A
Resistance Drain-Source RDS (on) : 0.09 Ohms
Package / Case : TO-3PN
Drain-Source Breakdown Voltage : - 150 V


Features:

* -36A, -150V, R DS(on) = 0.09  @VGS  = -10 V
* Low gate charge ( typical 81 nC)
* Low Crss ( typical  110 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating
 


Specifications

Symbol
Parameter
FQA36P15
Units
VDSS
Drain-Source Voltage
-150
V
ID
Drain Current     - Continuous (TC = 25°C)
                  - Continuous (TC = 100°C)
-36
A
-25.5
A
IDM
Drain Current - Pulsed             (Note 1)
-144
A
VGSS
Gate-Source Voltage
± 30
V
EAS
Single Pulsed Avalanche Energy      (Note 2)
1400
mJ
IAR
Avalanche Current                   (Note 1)
-36
A
EAR
Repetitive Avalanche Energy         (Note 1)
29.4
mJ
dv/dt
Peak Diode Recovery dv/dt           (Note 3)
-5.0
V/ns
PD
Power Dissipation     (TC = 25°C)
                     - Derate above 25°C
294
W
1.96
W/
TJ,TSTG
Operating and Storage Temperature Range
-55 to+175
TL
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds
300



Description

    These P-Channel enhancement mode power FQA36P15 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
    This advanced technology FQA36P15 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA36P15 is well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.




Parameters:

Technical/Catalog InformationFQA36P15
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityP-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C36A
Rds On (Max) @ Id, Vgs90 mOhm @ 18A, 10V
Input Capacitance (Ciss) @ Vds 3320pF @ 25V
Power - Max294W
PackagingTube
Gate Charge (Qg) @ Vgs105nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA36P15
FQA36P15



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