FQA35N40

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 35 A
Resistance Drain-Source RDS (on) : 0.105 Ohms
Package / Case : TO-3P
Drain-Source Breakdown Voltage : 400 V


Features:

* 35A, 400V, R_DS(on)  = 0.105  @V_GS  = 10 V
* Low gate charge ( typical 110 nC)
* Low Crss ( typical  65 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability  


Specifications

Symbol	Parameter	FQA35N40	Units
VDSS	Drain-Source Voltage	400	V
ID	Drain Current     - Continuous (TC = 25°C)                   - Continuous (TC = 100°C)	35	A
		22	A
IDM	Drain Current - Pulsed             (Note 1)	140	A
VGSS	Gate-Source Voltage	± 30	V
EAS	Single Pulsed Avalanche Energy      (Note 2)	1600	mJ
IAR	Avalanche Current                   (Note 1)	35	A
EAR	Repetitive Avalanche Energy         (Note 1)	31	mJ
dv/dt	Peak Diode Recovery dv/dt           (Note 3)	4.5	V/ns
PD	Power Dissipation     (TC = 25°C)                      - Derate above 25°C	310	W
		2.5	W/
TJ,TSTG	Operating and Storage Temperature Range	-55 to+150
TL	Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds	300

Description

    These N-Channel enhancement mode power FQA35N40 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.

    This advanced technology FQA35N40 has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.FQA35N40 is well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.

Parameters:

Technical/Catalog Information	FQA35N40
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	400V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	105 mOhm @ 17.5A, 10V
Input Capacitance (Ciss) @ Vds	5600pF @ 25V
Power - Max	310W
Packaging	Tube
Gate Charge (Qg) @ Vgs	140nC @ 10V
Package / Case	TO-3P
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FQA35N40 FQA35N40