Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Gate-Source Breakdown Voltage
: +/- 30 V
Package / Case
: TO-3PN
Resistance Drain-Source RDS (on)
: 0.16 Ohms
Continuous Drain Current
: 28.4 A
Features: * 28.4A, 500V, RDS(on) = 0.16 @VGS = 10 V
* Low gate charge ( typical 110 nC)
* Low Crss ( typical 60 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* Fast recovery body diode ( max, 250ns )Specifications
|
Symbol |
Parameter |
FQA28N50F |
Units |
|
VDSS |
Drain-Source Voltage |
500 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
28.4 |
A |
|
18 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
113.6 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
1300 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
28.4 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
31 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
17 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
310 |
W |
|
2.5 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power FQA28N50F field effect transistors are produced using Fairchild`s proprietary,planar stripe,DMOS technology.
This advanced technology FQA28N50F has been especially tailored to minimize on-state resistance,provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode.FQA28N50F is well suited for high efficiency switch mode power supply.elecronic lamp ballast based on half bridge.
Parameters: | Technical/Catalog Information | FQA28N50F |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 28.4A |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 14.2A, 10V |
| Input Capacitance (Ciss) @ Vds | 5600pF @ 25V |
| Power - Max | 310W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 140nC @ 10V |
| Package / Case | TO-3PN |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA28N50F
FQA28N50F
|
FQA28N50F Data Sheet
