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FQA28N15_F109

MOSFET 150V N-Channel

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SeekIC No. : 00161663 Detail

FQA28N15_F109: MOSFET 150V N-Channel

FQA28N15_F109 Data Sheet

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Part Number:
FQA28N15_F109
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 33 A
Resistance Drain-Source RDS (on) : 0.09 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-3PN Packaging : Tube    

Description

Transistor Polarity : N-Channel
Continuous Drain Current : 33 A
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 0.09 Ohms
Gate-Source Breakdown Voltage : +/- 25 V
Package / Case : TO-3PN


Parameters:

Technical/Catalog InformationFQA28N15_F109
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)150V
Current - Continuous Drain (Id) @ 25° C33A
Rds On (Max) @ Id, Vgs90 mOhm @ 16.5A, 10V
Input Capacitance (Ciss) @ Vds 1600pF @ 25V
Power - Max227W
PackagingTube
Gate Charge (Qg) @ Vgs52nC @ 10V
Package / CaseTO-3P
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FQA28N15_F109
FQA28N15_F109



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