Transistor Polarity
: N-Channel
Continuous Drain Current
: 33 A
Configuration
: Single
Maximum Operating Temperature
: + 175 C
Mounting Style
: Through Hole
Packaging
: Tube
Drain-Source Breakdown Voltage
: 150 V
Resistance Drain-Source RDS (on)
: 0.09 Ohms
Gate-Source Breakdown Voltage
: +/- 25 V
Package / Case
: TO-3P
Features: * 33A, 150V, R DS(on) = 0.09 @VGS = 10 V
* Low gate charge ( typical 40 nC)
* Low Crss ( typical 50 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* 175°C maximum junction temperature rating Specifications
|
Symbol |
Parameter |
FQA28N15 |
Units |
|
VDSS |
Drain-Source Voltage |
150 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
33 |
A |
|
23.3 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
132 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
300 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
33 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
22.7 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
5.5 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
227 |
W |
|
1.52 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+175 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power FQA28N15 field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology.
This advanced technology FQA28N15 has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA28N15 is well suited for low voltage applications such as audio amplifier,high efficiency switching DC/DC converters, and DC motor control.
Parameters: | Technical/Catalog Information | FQA28N15 |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 150V |
| Current - Continuous Drain (Id) @ 25° C | 33A |
| Rds On (Max) @ Id, Vgs | 90 mOhm @ 16.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 1600pF @ 25V |
| Power - Max | 227W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 52nC @ 10V |
| Package / Case | TO-3P |
| FET Feature | Standard |
| Other Names | FQA28N15
FQA28N15
|
FQA28N15 Data Sheet
