Transistor Polarity
: N-Channel
Configuration
: Single
Mounting Style
: Through Hole
Maximum Operating Temperature
: + 150 C
Packaging
: Tube
Drain-Source Breakdown Voltage
: 500 V
Gate-Source Breakdown Voltage
: +/- 30 V
Continuous Drain Current
: 24 A
Package / Case
: TO-3PN
Resistance Drain-Source RDS (on)
: 0.2 Ohms
Features: * 24A, 500V, RDS(on) = 0.2 @VGS = 10 V
* Low gate charge ( typical 90 nC)
* Low Crss ( typical 55 pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* Fast recovery body diode ( max, 250ns )Specifications
|
Symbol |
Parameter |
FQA24N50F |
Units |
|
VDSS |
Drain-Source Voltage |
500 |
V |
|
ID |
Drain Current - Continuous (TC = 25°C)
- Continuous (TC = 100°C) |
24 |
A |
|
15.2 |
A |
|
IDM |
Drain Current - Pulsed (Note 1) |
96 |
A |
|
VGSS |
Gate-Source Voltage |
± 30 |
V |
|
EAS |
Single Pulsed Avalanche Energy (Note 2) |
1100 |
mJ |
|
IAR |
Avalanche Current (Note 1) |
24 |
A |
|
EAR |
Repetitive Avalanche Energy (Note 1) |
29 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt (Note 3) |
15 |
V/ns |
|
PD |
Power Dissipation (TC = 25°C)
- Derate above 25°C |
290 |
W |
|
2.33 |
W/ |
|
TJ,TSTG |
Operating and Storage Temperature Range |
-55 to+150 |
|
|
TL |
Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds |
300 |
|
Description These N-Channel enhancement mode power FQA24N50F field effec transistors are produced using Fairchild's proprietary planar stripe, DMOS technology.
This advanced technology FQA24N50F has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. FQA24N50F is wel suited for high efficiency switch mode power supplies where the body diode is used such as phase-shift ZVS basic full-bridge topology.
Parameters: | Technical/Catalog Information | FQA24N50F |
| Vendor | Fairchild Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 24A |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 12A, 10V |
| Input Capacitance (Ciss) @ Vds | 4500pF @ 25V |
| Power - Max | 290W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 120nC @ 10V |
| Package / Case | TO-3PN |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | FQA24N50F
FQA24N50F
|
FQA24N50F Data Sheet
