FPN660

DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 3 A
Packaging : Bulk
Maximum Operating Frequency : 75 MHz
Package / Case : TO-226


Specifications

Symbol	Parameter	FPN660	FPN660A	Units
VCEO	Collector-Emitter Voltage	60	60	V
VCBO	Collector-Base Voltage	80	60	V
VEBO	Emitter-Base Voltage	5	5	V
IC	Collector Current - Continuous	3	3	A
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 ~ +150	-55 ~ +150	°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) All voltage (V) and currents (A) are negative polarity for PNP transistors


Parameters:

Technical/Catalog Information	FPN660
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	3A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic	450mV @ 200mA, 2A
Frequency - Transition	75MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FPN660 FPN660