FPN430

DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Frequency : 100 MHz
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 30 V
Maximum DC Collector Current : 2 A
Package / Case : TO-226


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	30	V
VCBO	Collector-Base Voltage	35	V
VEBO	Emitter-Base Voltage	5.0	V
IC	Collector Current - Continuous	2.0	A
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  


Parameters:

Technical/Catalog Information	FPN430
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	30V
Current - Collector (Ic) (Max)	2A
Power - Max	1W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 2V
Vce Saturation (Max) @ Ib, Ic	500mV @ 100mA, 1A
Frequency - Transition	100MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-226
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FPN430 FPN430