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FPM2750QFN

Features: FEATURES:• Balanced low noise amplifier module• Excellent Noise figure: 0.4dB at 1850MHz• Low drive current: 40mA typical (3.0V)• Combined IP3: 36dBm (100mA)• Combined P1dB: 23dBm (100mA)• Small footprint: 4mm x 4mm x 0.9mm QFN• RoHS compliant: (...

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SeekIC No. : 004343061 Detail

FPM2750QFN: Features: FEATURES:• Balanced low noise amplifier module• Excellent Noise figure: 0.4dB at 1850MHz• Low drive current: 40mA typical (3.0V)• Combined IP3: 36dBm (100mA)•...

FPM2750QFN Data Sheet

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Part Number:
FPM2750QFN
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

FEATURES:
• Balanced low noise amplifier module
• Excellent Noise figure: 0.4dB at 1850MHz
• Low drive current: 40mA typical (3.0V)
• Combined IP3: 36dBm (100mA)
• Combined P1dB: 23dBm (100mA)
• Small footprint: 4mm x 4mm x 0.9mm QFN
• RoHS compliant: (Directive 2002/95/EC


Application

• Wireless infrastructure: Tower mounted
  Amplifiers and front end LNAs for
  EGSM/PCS/WCDMA/UMTS base stations
• High intercept-point LNAs


Specifications

PARAMETER SYMBOL TEST CONDITIONS ABSOLUTE MAXIMUM
Drain-Source Voltage VDS   6V
Gate-Source Voltage VGS   -3V
Drain-Source Current IDS For VDS < 2V IDSS
Gate Current IG Forward or reverse current 7.5mA
RF Input Power (Note 2) PIN Under any acceptable bias state 150mW
Channel Operating Temperature TCH Under any acceptable bias state 175°C
Storage Temperature TSTG Non-Operating Storage -55°C to 150°C
Total Power Dissipation (Note 3) PTOT See De-Rating Note below 1W
Gain Compression Comp. Under any bias cond 5dB
Notes:
1. TAmbient = 22°C unless otherwise noted; exceeding any one of these absolute maximum ratings may
cause permanent damage to the device
2. RF Input must be further limited if input VSWR > 2.5:1
3. Total Power Dissipation is defined as: PTOT = PDC + PIN POUT
where PDC = DC Bias Power, PIN = RF Input Power, POUT = RF Output Power
Total Power Dissipation shall be de-rated above 22°C as follows:
PTOT = (150 TCASE ) / JC W
where TCASE = Temperature of the thermal pad on the underside of the package
4. JC increases linearly from 124°C/W at a TCASE of 22°C to 145°C/W at a TCASE of 145°C
5. Information on the mounting of QFN style packages for optimum thermal performance is available on request.


Description

The FPM2750QFN is a packaged pair of pseudomorphic High Electron Mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic\ 0.25m process ensures class-leading noise\ performance. The use of a small footprint plastic package of FPM2750QFN allows for a cost effective total system implementation.




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