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FPDA200V

Features: 21 dBm Output Power at 1-dB Compression at 18 GHz12.5 dB Power Gain at 18 GHz55% Power-Added EfficiencySource Vias to Backside MetallizationSpecifications Parameter Symbol Test Conditions Min Max Units Drain-Source Voltage VDS TAmbient = 22 ± 3 °C 8 V Gate-Source ...

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SeekIC No. : 004343056 Detail

FPDA200V: Features: 21 dBm Output Power at 1-dB Compression at 18 GHz12.5 dB Power Gain at 18 GHz55% Power-Added EfficiencySource Vias to Backside MetallizationSpecifications Parameter Symbol Test Con...

FPDA200V Data Sheet

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Part Number:
FPDA200V
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

 21 dBm Output Power at 1-dB Compression at 18 GHz
 12.5 dB Power Gain at 18 GHz
 55% Power-Added Efficiency
 Source Vias to Backside Metallization




Specifications

Parameter Symbol Test Conditions Min Max Units
Drain-Source Voltage VDS TAmbient = 22 ± 3 °C   8 V
Gate-Source Voltage VGS TAmbient = 22 ± 3 °C   -3 V
Drain-Source Current IDS TAmbient = 22 ± 3 °C   IDSS mA
Gate Current IG TAmbient = 22 ± 3 °C   10 mA
RF Input Power2 PIN TAmbient = 22 ± 3 °C   100 mW
Channel Operating Temperature TCH TAmbient = 22 ± 3 °C   175 ºC
Storage Temperature TSTG - -65 175 ºC
Total Power Dissipation PTOT TAmbient = 22 ± 3 °C   550 W
Notes:
` Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device.
` Power Dissipation defined as: PTOT (PDC + PIN) POUT, where
                                                    PDC: DC Bias Power
                                                    PIN: RF Input Power
                                                    POUT: RF Output Power
` Absolute Maximum Power Dissipation to be de-rated as follows above 25°C:
                                                   PTOT= 550mW (3.7mW/°C) x THS
where THS = heatsink or ambient temperature.


Description

The FPDA200V is an Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) Pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 mm by 200 mm Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epitaxial structure and processing of FPDA200V have been optimized for high dynamic range.

FPDA200V applications include high dynamic range driver stages for commercial applications including wireless infrastructure systems, broad bandwidth amplifiers, and optical systems.




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