IGBT Transistors SPM for Front-End Rectifier;Motion-SPM
FPAB30BH60B: IGBT Transistors SPM for Front-End Rectifier;Motion-SPM
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Collector- Emitter Voltage VCEO Max : | 600 V | Continuous Collector Current at 25 C : | 30 A | ||
Gate-Emitter Leakage Current : | 250 uA | Power Dissipation : | 104 W | ||
Maximum Operating Temperature : | + 125 C | Packaging : | Tube |