IGBT Modules 1200V 75A PIM
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Features: ·0.5 dB Noise Figure at 2 GHz·21 dBm P-1dB 2 GHz·17 dB Power Gain at 2 GHz·33 dBm IP3 at...
Product : | IGBT Silicon Modules | Configuration : | Hex |
Collector- Emitter Voltage VCEO Max : | 1200 V | Collector-Emitter Saturation Voltage : | 2.15 V |
Continuous Collector Current at 25 C : | 105 A | Gate-Emitter Leakage Current : | 400 nA |
Power Dissipation : | 350 W | Maximum Operating Temperature : | + 125 C |
Package / Case : | EconoPIM3 |