IGBT Transistors 1200V 40A PIM
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Configuration : | Hex | Collector- Emitter Voltage VCEO Max : | 1200 V |
Collector-Emitter Saturation Voltage : | 2.3 V | Maximum Gate Emitter Voltage : | +/- 20 V |
Continuous Collector Current at 25 C : | 40 A | Gate-Emitter Leakage Current : | 400 nA |
Power Dissipation : | 200 W | Maximum Operating Temperature : | + 125 C |
Package / Case : | EconoPIM3-24 |