Features: • 50 4000 MHz• 18 dB Gain @ 900 MHz• +34 dBm P1dB• +46 dBm Output IP3• High Drain Efficiency• Pb-free 6mm 28-pin QFN package• MTTF > 100 yearsApplication• Mobile Infrastructure• CATV / DBS• W-LAN / ISM• RFID• Def...
FP31QF: Features: • 50 4000 MHz• 18 dB Gain @ 900 MHz• +34 dBm P1dB• +46 dBm Output IP3• High Drain Efficiency• Pb-free 6mm 28-pin QFN package• MTTF > 100 years...
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DC Parameter |
Units |
Min |
Typ |
Max |
Saturated Drain Current, Idss |
mA |
1170 |
||
Transconductance, Gm |
mS |
590 |
||
Pinch Off Voltage, Vp (1) |
V |
-2.0 |
The FP31QF is a high performance 2-Watt HFET (Heterostructure FET) in a low-cost lead-free 28-pin 6x6 mm QFN (Quad Flatpack, No-Lead) surface-mount package. FP31QF works optimally at a drain bias of +9 V and 450 mA to achieve +46 dBm output IP3 performance and an output power of +34 dBm at 1-dB compression.
The device conforms to WJ Communications' long history of producing high reliability and quality components. The FP31QF has an associated MTTF of a minimum of 100 years at a mounting temperature of 85°C. All devices are 100% RF & DC tested.
The FP31QF is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required.