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FP1510SOT89

Features: · 28 dBm Output Power at 1-dB Compression at 1.8 GHz· 19 dB Power Gain at 1.8 GHz· 1.0 dB Noise Figure· 45 dBm Output IP3 at 1.8 GHz· 50% Power-Added EfficiencyApplication·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory.·Comple...

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SeekIC No. : 004342949 Detail

FP1510SOT89: Features: · 28 dBm Output Power at 1-dB Compression at 1.8 GHz· 19 dB Power Gain at 1.8 GHz· 1.0 dB Noise Figure· 45 dBm Output IP3 at 1.8 GHz· 50% Power-Added EfficiencyApplication·Applications Not...

FP1510SOT89 Data Sheet

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Part Number:
FP1510SOT89
Supply Ability:
5000

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Product Details

Description



Features:

· 28 dBm Output Power at 1-dB Compression at 1.8 GHz
· 19 dB Power Gain at 1.8 GHz
· 1.0 dB Noise Figure
· 45 dBm Output IP3 at 1.8 GHz
· 50% Power-Added Efficiency


Application

·Applications Notes are available from your local Filtronic Sales Representative or directly from the factory.
 ·Complete design data, including S-parameters, noise data, and large-signal models are available on the Filtronic web site.


Specifications

Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Saturated Drain-Source Current
LP1510SOT89-1
ldss
VDS = 2 V; VGS = 0 V
375
420
450
mA
LP1510SOT89-2
451
490
526
mA
LP1510SOT89-3
527
560
600
mA
Output Power @
1 dB Compression
P1dB
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
26.5
28
dBm
Power Gain @
1 dB Compression
G1dB
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
17
19
dB
Power Gain at 1-dB Compression
MAG
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
50
%
Noise Figure
NF
f = 12 GHz; VDS = 5V; IDS = 50% IDSS
1.0
dB
Output Third-Order Intercept Point
f = 12 GHz; VDS = 5V; IDS = 50% IDSS;
POUT = 15.5 dBm
45
mA
Maximum Drain-Source Current
IDSS
VDS = 2 V; VGS = 0 V
925
mS
Transconductance
GM
VDS = 2 V; VGS = 0 V
400
100
A
Pinch-Off Voltage
VP
VDS = 2 V; IDS = 1 mA
-0.25
-1.2
-2.0
V
Gate-Drain Breakdown
Voltage Magnitude
VBDGD
IGS = 1 mA
10
12
V
Gate-Source Breakdown
Voltage Magnitude
VBDGS
IGS = 1 mA
10
13
V



Description

The FP1510SOT89 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (pHEMT). FP1510SOT89 utilizes a 0.10 µm x 1500 µm Schottky barrier gate, defined by electron-beam photolithography. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistance. The epitaxial structure and processing have been optimized for reliable high-power applications. The FP1510 also features Si3N4 passivation and is available in die form or in other packages.

FP1510SOT89 applications include drivers or output stages in PCS/Cellular amplifiers, WLL and WLAN systems, and other types of wireless infrastructure systems.




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