Features: . 3x3x0.9mm Packaged pHEMT Switch. Suitable for L, S, and C-band digital cellular, cordless telephony and WLAN applications. High isolation, 25dB typ at 2.5GHz. Low insertion loss, 0.5dB typ at 2.5GHz. Low insertion loss, 1.0dB typ at 6GHz. P0.1dB > 38dBm at 2GHz PinoutSpecifications...
FMS2020QFN: Features: . 3x3x0.9mm Packaged pHEMT Switch. Suitable for L, S, and C-band digital cellular, cordless telephony and WLAN applications. High isolation, 25dB typ at 2.5GHz. Low insertion loss, 0.5dB ...
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Features: • Low insertion loss (0.6dB @ 900 MHz)• Operation down to 2V control• ...
Features: ·Low insertion loss (0.5dB @ 900 MHz)·Operation down to 2V control·3 control lines. Sing...
Features: ·Low insertion loss (0.5dB @ 900 MHz)·Operation down to 2V control·3 control lines. Sing...
Parameter |
Symbol |
Absolute Maximum |
Max Input Power |
Pin |
+38dBm |
Control Voltage |
Vctrl |
+5V |
Operating Temperature |
Toper |
-40°C to +100°C |
Storage Temperature |
Tstor |
-55°C to +150°C |
The FMS2020QFN is a low loss, high power and linear single pole dual throw Gallium Arsenide antenna switch. The die is fabricated using the Filtronic FL05 0.5m switch process technology, which offers leading edge performance optimised for switch applications. The FMS2020QFN is designed for use in L, S, and C band wireless applications and WLAN access points where high linearity switching is required.