Features: 3x3x0.9mm Packaged pHEMT Switch Suitable for Single-band WLAN 802.11b/g Applications Excellent low control voltage performance Very low Insertion loss typ. 0.6dB at 2.5GHz High isolation typ. 23dB at 2.5GHz Filtronic Advanced GaAs pHEMT TechnologySpecifications Parameter Symbol Ab...
FMS2017QFN: Features: 3x3x0.9mm Packaged pHEMT Switch Suitable for Single-band WLAN 802.11b/g Applications Excellent low control voltage performance Very low Insertion loss typ. 0.6dB at 2.5GHz High isolation t...
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Features: • Low insertion loss (0.6dB @ 900 MHz)• Operation down to 2V control• ...
Features: ·Low insertion loss (0.5dB @ 900 MHz)·Operation down to 2V control·3 control lines. Sing...
Features: ·Low insertion loss (0.5dB @ 900 MHz)·Operation down to 2V control·3 control lines. Sing...
Parameter | Symbol | Absolute Maximum |
Max Input Power | Pin | +36dBm |
Control Voltage | Vctrl | +5V |
Operating Temperature | Toper | -40°C to +100°C |
Storage Temperature | Tstor | -55°C to +150°C |
The FMS2017QFN is a low loss, single band Gallium Arsenide antenna diversity switch designed for use in Wireless LAN applications. The die is fabricated using the Filtronic FL05 0.5m switch process technology that offers leading edge performance, optimised for switch applications. The FMS2017QFN is designed for use in 802.11b/g WLAN modules