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FMS2016QFN-1

Features: 3x3x0.9mm Packaged pHEMT Switch NiPdAu finish for Military and High reliability applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels Very high isolation: >29dB at 1.8GHz Very low Insertion loss: 0.65dB at 1.8GHz Very...

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SeekIC No. : 004342825 Detail

FMS2016QFN-1: Features: 3x3x0.9mm Packaged pHEMT Switch NiPdAu finish for Military and High reliability applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE...

FMS2016QFN-1 Data Sheet

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Part Number:
FMS2016QFN-1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/17

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Product Details

Description



Features:

3x3x0.9mm Packaged pHEMT Switch
NiPdAu finish for Military and High
reliability applications
Excellent low control voltage performance
Excellent harmonic performance under
GSM/DCS/PCS/EDGE power levels
Very high isolation:  >29dB at 1.8GHz
Very low Insertion loss: 0.65dB at 1.8GHz
Very low control current


Pinout

Connection Diagram


Specifications

Parameter Symbol Absolute Maximum
Max Input Power Pin +38dBm
Control Voltage V ctrl +5V
Operating Temp T oper -40°C to +100°C
Storage Temp T stor -55°C to +150°C



Description

The FMS2016QFN is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset applications.  The die is fabricated using the Filtronic FL05 0.5m switch process technology, which offers excellent performance optimised for switch applications.   The FMS2016QFN is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary.
 
 




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