Features: • 3x3x0.9mm Packaged pHEMT Switch• NiPdAu finish for Military and High reliability applications• High isolation: >30dB at 1.8GHz• Excellent low control voltage performance• Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels• RoHS Com...
FMS2016-005: Features: • 3x3x0.9mm Packaged pHEMT Switch• NiPdAu finish for Military and High reliability applications• High isolation: >30dB at 1.8GHz• Excellent low control voltage p...
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Features: • Low insertion loss (0.6dB @ 900 MHz)• Operation down to 2V control• ...
Features: ·Low insertion loss (0.5dB @ 900 MHz)·Operation down to 2V control·3 control lines. Sing...
Features: ·Low insertion loss (0.5dB @ 900 MHz)·Operation down to 2V control·3 control lines. Sing...
Series | FMS |
Insertion/Conversion Loss (dB) | 0.65 @ 1.8GHz |
Iso/Atten Range (dB) | >30 @ 1.8GHz |
Package/Size (Dim in mm) | QFN 3X3 |
PARAMETER |
SYMBOL |
ABSOLUTE MAXIMUM |
Max Input Power |
Pin |
+38dBm |
Control Voltage |
Vctrl |
+6V |
Operating Temperature |
Toper |
-40°C to +100°C |
Storage Temperature |
Tstor |
-55°C to +150°C |
The FMS2016-005 is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch signed for use in mobile handset and other high power switching applications. The die is fabricated using the iltronic FL05 0.5m switch process technology, which offers excellent performance optimised for switch applications.