FMS2016-005

Features: • 3x3x0.9mm Packaged pHEMT Switch• NiPdAu finish for Military and High reliability applications• High isolation: >30dB at 1.8GHz• Excellent low control voltage performance• Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels• RoHS Com...

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SeekIC No. : 004342824 Detail

FMS2016-005: Features: • 3x3x0.9mm Packaged pHEMT Switch• NiPdAu finish for Military and High reliability applications• High isolation: >30dB at 1.8GHz• Excellent low control voltage p...

floor Price/Ceiling Price

Part Number:
FMS2016-005
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/12

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Product Details

Description



Features:

• 3x3x0.9mm Packaged pHEMT Switch
• NiPdAu finish for Military and High reliability applications
• High isolation: >30dB at 1.8GHz
• Excellent low control voltage performance
• Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels
• RoHS Compliant (Directive 2002/95/EC)





Application

• Multi-band GSM/DCS/PCS/EDGE handset modules
• High power and linear RF switching applications





Specifications

Series FMS
Insertion/Conversion Loss (dB) 0.65 @ 1.8GHz
Iso/Atten Range (dB) >30 @ 1.8GHz
Package/Size (Dim in mm) QFN 3X3


PARAMETER
SYMBOL
ABSOLUTE
MAXIMUM
Max Input Power
Pin
+38dBm
Control Voltage
Vctrl
+6V
Operating Temperature
Toper
-40°C to +100°C
Storage Temperature
Tstor
-55°C to +150°C





Description

The FMS2016-005 is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch signed for use in mobile handset and other high power switching applications. The die is fabricated using the iltronic FL05 0.5m switch process technology, which offers excellent performance optimised for switch applications.






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