Features: • 3x3x0.9mm Packaged pHEMT Switch• High isolation: >30dB at 1.8GHz• Low Insertion loss: 0.65dB at 1.8GHz• Excellent low control voltage performance• Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels• RoHS Compliant (Directive 2002/9...
FMS2016-001: Features: • 3x3x0.9mm Packaged pHEMT Switch• High isolation: >30dB at 1.8GHz• Low Insertion loss: 0.65dB at 1.8GHz• Excellent low control voltage performance• Excell...
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Features: • Low insertion loss (0.6dB @ 900 MHz)• Operation down to 2V control• ...
Features: ·Low insertion loss (0.5dB @ 900 MHz)·Operation down to 2V control·3 control lines. Sing...
Features: ·Low insertion loss (0.5dB @ 900 MHz)·Operation down to 2V control·3 control lines. Sing...
PARAMETER |
SYMBOL |
ABSOLUTE MAXIMUM |
Max Input Power |
Pin |
+38dBm |
Control Voltage |
Vctrl |
+6V |
Operating Temperature |
Toper |
-40°C to +100°C |
Storage Temperature |
Tstor |
-55°C to +150°C |
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device.
Series | FMS |
Insertion/Conversion Loss (dB) | 0.65 @ 1.85GHz |
Iso/Atten Range (dB) | >30 @ 1.8GHz |
Package/Size (Dim in mm) | QFN 3X3 |
The FMS2016-001 is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch esigned for use in mobile handset and other high power switching applications. The die is fabricated using the iltronic FL05 0.5m switch process technology, FMS2016-001 offers excellent performance optimised for switch applications.