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FMS2014QFN

Features: . 3x3x0.9mm Packaged pHEMT Switch. Excellent low control voltage performance. Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels. Very high Tx-Rx isolation: >28dB typ. at 1.8GHz. Very low Insertion loss: 0.5dB at 1.8GHz. Very low control current PinoutSpecifications ...

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SeekIC No. : 004342821 Detail

FMS2014QFN: Features: . 3x3x0.9mm Packaged pHEMT Switch. Excellent low control voltage performance. Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels. Very high Tx-Rx isolation: >28dB typ. ...

FMS2014QFN Data Sheet

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Part Number:
FMS2014QFN
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/18

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Product Details

Description



Features:

.  3x3x0.9mm Packaged pHEMT Switch 
.  Excellent low control voltage performance 
.  Excellent harmonic performance under
   GSM/DCS/PCS/EDGE power levels 
.  Very high Tx-Rx isolation:  >28dB typ. at 1.8GHz 
.  Very low Insertion loss: 0.5dB at 1.8GHz 
.  Very low control current


Pinout

Connection Diagram


Specifications

Parameter

Symbol

Absolute Maximum

Max Input Power

Pin

+38dBm

Control Voltage

Vctrl

+5V

Operating Temperature

Toper

-40°C to +100°C

Storage Temperature

Tstor

-55°C to +150°C




Description

 The FMS2014QFN is a low loss, high power and linear single pole double throw Gallium Arsenide antenna switch designed for use in mobile handset applications.  The die is fabricated using the Filtronic FL05 0.5m switch process technology, which offers excellent performance optimised for switch applications.   The FMS2014QFN is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary.




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