Features: · 3x3x0.9mm Packaged pHEMT Switch· Excellent low control voltage performance· Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels· Very high Tx-Rx isolation: >28dB typ. at 1.8GHz· Very low Insertion loss: 0.5dB at 1.8GHz· Very low control current· RoHS compliantSpecific...
FMS2014-001: Features: · 3x3x0.9mm Packaged pHEMT Switch· Excellent low control voltage performance· Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels· Very high Tx-Rx isolation: >28dB typ. a...
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Features: • Low insertion loss (0.6dB @ 900 MHz)• Operation down to 2V control• ...
Features: ·Low insertion loss (0.5dB @ 900 MHz)·Operation down to 2V control·3 control lines. Sing...
Features: ·Low insertion loss (0.5dB @ 900 MHz)·Operation down to 2V control·3 control lines. Sing...
PARAMETER |
SYMBOL |
ABSOLUTE MAXIMUM |
Max Input Power |
Pin |
+38dBm |
Control Voltage |
Vctrl |
+5V |
Operating Temperature |
Toper |
-40°C to +100°C |
Storage Temperature |
Tstor |
-55°C to +150°C |
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device.
Series | FMS |
Insertion/Conversion Loss (dB) | 0.5 @ 1.8GHz |
Iso/Atten Range (dB) | >28dB @ 1.8GHz |
Vcc (V) | 5 |
Package/Size (Dim in mm) | QFN 3X3x0.9 |
The FMS2014-001 is a low loss, high power and linear single pole double throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5m switch process technology, which offers excellent performance optimised for switch applications. The FMS2014-001 is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary.