FMS2014-001

Features: · 3x3x0.9mm Packaged pHEMT Switch· Excellent low control voltage performance· Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels· Very high Tx-Rx isolation: >28dB typ. at 1.8GHz· Very low Insertion loss: 0.5dB at 1.8GHz· Very low control current· RoHS compliantSpecific...

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FMS2014-001 Picture
SeekIC No. : 004342820 Detail

FMS2014-001: Features: · 3x3x0.9mm Packaged pHEMT Switch· Excellent low control voltage performance· Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels· Very high Tx-Rx isolation: >28dB typ. a...

floor Price/Ceiling Price

Part Number:
FMS2014-001
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/2/15

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Product Details

Description



Features:

· 3x3x0.9mm Packaged pHEMT Switch
· Excellent low control voltage performance
· Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels
· Very high Tx-Rx isolation: >28dB typ. at 1.8GHz
· Very low Insertion loss: 0.5dB at 1.8GHz
· Very low control current
· RoHS compliant





Specifications

PARAMETER
SYMBOL
ABSOLUTE
MAXIMUM
Max Input Power
Pin
+38dBm
Control Voltage
Vctrl
+5V
Operating Temperature
Toper
-40°C to +100°C
Storage Temperature
Tstor
-55°C to +150°C


Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device.



Series FMS
Insertion/Conversion Loss (dB) 0.5 @ 1.8GHz
Iso/Atten Range (dB) >28dB @ 1.8GHz
Vcc (V) 5
Package/Size (Dim in mm) QFN 3X3x0.9





Description

The FMS2014-001 is a low loss, high power and linear single pole double throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5m switch process technology, which offers excellent performance optimised for switch applications. The FMS2014-001 is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary.






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