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FMS2003QFN-1

Features: 3x3x0.9mm Packaged pHEMT SwitchNiPdAu finish for Military and High reliability applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels High isolation: >30dB at 0.9GHz Low Insertion loss: 0.5dB at 0.9GHz Low control curr...

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SeekIC No. : 004342813 Detail

FMS2003QFN-1: Features: 3x3x0.9mm Packaged pHEMT SwitchNiPdAu finish for Military and High reliability applications Excellent low control voltage performance Excellent harmonic performance under GSM/DCS/PCS/EDGE ...

FMS2003QFN-1 Data Sheet

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Part Number:
FMS2003QFN-1
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

 3x3x0.9mm Packaged pHEMT Switch
NiPdAu finish for Military and High reliability applications
Excellent low control voltage performance
Excellent harmonic performance under GSM/DCS/PCS/EDGE power levels
High isolation: >30dB at 0.9GHz
Low Insertion loss: 0.5dB at 0.9GHz
Low control current


Specifications

Parameter Symbol Absolute Maximum
Max Input Power Pin +36dBm
Control Voltage Vctrl +5V
Operating Temperature Toper -40°C to +100°C
Storage Temperature Tstor -55°C to +150°C



Description

The FMS2003QFN is a low loss, high power and linear single pole four throw Gallium Arsenide antenna switch designed for use in mobile handset applications. The die is fabricated using the Filtronic FL05 0.5m switch process technology, which offers excellent performance optimised for switch applications. The FMS2003QFN is designed for use in dual/tri and quad band GSM handset antenna switch modules and RF front-end modules. It can also find use in other applications where high power and linear RF switching is necessary




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