FMG2G75US60

IGBT Modules 600V/75A

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SeekIC No. : 00142086 Detail

FMG2G75US60: IGBT Modules 600V/75A

floor Price/Ceiling Price

Part Number:
FMG2G75US60
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Product : IGBT Silicon Modules Configuration : Dual
Collector- Emitter Voltage VCEO Max : 600 V Collector-Emitter Saturation Voltage : 2.2 V
Continuous Collector Current at 25 C : 75 A Gate-Emitter Leakage Current : +/- 100 nA
Power Dissipation : 310 W Maximum Operating Temperature : + 150 C
Package / Case : 7PM-GA Packaging : Bulk    

Description

Collector- Emitter Voltage VCEO Max : 600 V
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector-Emitter Saturation Voltage : 2.2 V
Configuration : Dual
Continuous Collector Current at 25 C : 75 A
Packaging : Bulk
Power Dissipation : 310 W
Gate-Emitter Leakage Current : +/- 100 nA
Package / Case : 7PM-GA


Features:

• UL Certified No. E209204
• Short Circuit rated 10us @ TC = 100°C, VGE = 15V
• High Speed Switching
• Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 75A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD





Application

• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS





Specifications

Symbol Description FMG2G75US60 Units
VCES Collector-Emitter Voltage 600 V
VGES Gate-Emitter Voltage +20 V
IC Collector Current@ TC = 25°C 75 A
ICM(1) Pulsed Collector Current 150 A
IF Diode Continuous Forward Current @ TC = 100°C 75 A
IFM Diode Maximum Forward Current 150 A
TSC Short Circuit Withstand Time @ TC = 100°C 10 US
PD Maximum Power Dissipation @ TC = 25°C 310 W
TJ Operating Junction Temperature -40 to +150 °C
Tstg Storage Temperature Range -40 to +125 °C
Viso Isolation Voltage @ AC 1minute 2500 V
Mounting
Torque
Power Terminals Screw : M5 2.0 N.m
Mounting Screw : M5 2.0 N.m
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature





Description

Fairchild's Insulated Gate Bipolar Transistor (IGBT)FMG2G75US60 power modules provide low conduction and switching losses as well as short circuit ruggedness. FMG2G75US60 is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.






Parameters:

Technical/Catalog InformationFMG2G75US60
VendorFairchild Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeScrew Mount
Package Name7PM-GA
Input TypeStandard
Collector Emitter Voltage (Vces)600.0 [Max]
Typical Vce(on) @ Vge, Ic2.2V @ 15V, 75A
Gate Emitter Voltage (Vge)20 [Max]
Collector Current (Ic)75.00 A [Max]
Collector Peak Current (Icm)150.000 A [Nom]
Power Dissipation310.000 W [Max]
PackagingBulk
Has Digi-ReelNot TR
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names FMG2G75US60
FMG2G75US60



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