FMG2G75US120

Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Maximum Gate Emitter Voltage : +/- 20 V
Collector- Emitter Voltage VCEO Max : 1200 V
Configuration : Dual
Continuous Collector Current at 25 C : 75 A
Packaging : Bulk
Collector-Emitter Saturation Voltage : 3 V
Package / Case : 7PM-GA-7
Power Dissipation : 445 W


Features:

• Short Circuit Rated Time; 10us @ T_C =100°C, V_GE = 15V
• High Speed Switching
• Low Saturation Voltage : V_CE(sat) = 2.6 V @ I_C = 75A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
• UL Certified No.E209204


Application

• AC & DC Motor Controls
• General Purpose Inverters
• Weldings
• Servo Controls
• UPS


Specifications

Symbol	Description	FMG2G75US120	Units
VCES	Collector-Emitter Voltage	600	V
VGES	Gate-Emitter Voltage	+20	V
IC	Collector Current@ TC = 25°C	75	A
ICM(1)	Pulsed Collector Current	150	A
IF	Diode Continuous Forward Current @ TC = 100°C	75	A
IFM	Diode Maximum Forward Current	150	A
TSC	Short Circuit Withstand Time @ TC = 100°C	10	US
PD	Maximum Power Dissipation @ TC = 25°C	445	W
TJ	Operating Junction Temperature	-40 to +150	°C
Tstg	Storage Temperature Range	-40 to +125	°C
Viso	Isolation Voltage @ AC 1minute	2500	V
Mounting Torque	Power Terminals Screw : M5	4.0	N.m
	Mounting Screw : M5	4.0	N.m

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature


Description

Fairchild IGBT Power Module FMG2G75US120 provides low conduction and switching losses as well as short circuit ruggedness. FMG2G75US120 is designed for the applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short-circuit ruggedness is required