FMG2G200US60

Collector- Emitter Voltage VCEO Max : 600 V
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector-Emitter Saturation Voltage : 2.1 V
Configuration : Dual
Packaging : Bulk
Continuous Collector Current at 25 C : 200 A
Power Dissipation : 695 W
Gate-Emitter Leakage Current : +/- 100 nA
Package / Case : 7PM-HA


Features:

• Short Circuit Rated Time; 10us @ T_C =100°C, V_GE = 15V
• High Speed Switching
• Low Saturation Voltage : V_CE(sat) = 2.1 V @ I_C = 200A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD
• UL Certified No.E209204


Application

• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS


Specifications

Symbol	Description	FMG2G200US60	Units
VCES	Collector-Emitter Voltage	600	V
VGES	Gate-Emitter Voltage	+20	V
IC	Collector Current@ TC = 25°C	200	A
ICM(1)	Pulsed Collector Current	400	A
IF	Diode Continuous Forward Current @ TC = 100°C	200	A
IFM	Diode Maximum Forward Current	400	A
TSC	Short Circuit Withstand Time @ TC = 100°C	10	US
PD	Maximum Power Dissipation @ TC = 25°C	695	W
TJ	Operating Junction Temperature	-40 to +150	°C
Tstg	Storage Temperature Range	-40 to +125	°C
Viso	Isolation Voltage @ AC 1minute	2500	V
Mounting Torque	Power Terminals Screw : M5	4.0	N.m
	Mounting Screw : M6	4.0	N.m

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature


Description

Fairchild IGBT Power Module FMG2G200US60 provides low conduction and switching losses as well as short circuit ruggedness. FMG2G200US60 is designed for the applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short-circuit ruggedness is required.

Parameters:

Technical/Catalog Information	FMG2G200US60
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	IGBT
Voltage - Rated	600V
Current Rating	200A
Package / Case	7PM-GA
Packaging	Bulk
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FMG2G200US60 FMG2G200US60