IGBT Transistors 600V/100A/2
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Configuration : | Dual | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2.2 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 100 A | Gate-Emitter Leakage Current : | +/- 100 nA | ||
Power Dissipation : | 400 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | 7PM-GA-7 | Packaging : | Bulk |