FMG1G50US60L

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Continuous Collector Current at 25 C : 50 A
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Power Dissipation : 250 W
Gate-Emitter Leakage Current : +/- 100 nA
Packaging : Bulk
Package / Case : 7PM-GA-7


Features:

• UL Certified No. E209204
• Short Circuit rated 10us @ T_C = 100°C, V_GE = 15V
• High Speed Switching
• Low Saturation Voltage : V_CE(sat) = 2.2 V @ I_C = 50A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD


Application

• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS


Specifications

Symbol	Description	FMG1G50US60L	Units
VCES	Collector-Emitter Voltage	600	V
VGES	Gate-Emitter Voltage	+20	V
IC	Collector Current@ TC = 25°C	50	A
ICM(1)	Pulsed Collector Current	500	A
IF	Diode Continuous Forward Current @ TC = 100°C	50	A
IFM	Diode Maximum Forward Current	100	A
TSC	Short Circuit Withstand Time @ TC = 100°C	10	US
PD	Maximum Power Dissipation @ TC = 25°C	250	W
TJ	Operating Junction Temperature	-40 to +150	°C
Tstg	Storage Temperature Range	-40 to +125	°C
Viso	Isolation Voltage @ AC 1minute	2500	V
Mounting Torque	Power Terminals Screw : M5	2.0	N.m
	Mounting Screw : M5	2.0	N.m

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature


Description

Fairchild's Insulated Gate Bipolar Transistor (IGBT)FMG1G50US60L power modules provide low conduction and switching losses as well as short circuit ruggedness. FMG1G50US60L is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature