FMG1G100US60H

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Configuration : Single
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.2 V
Continuous Collector Current at 25 C : 100 A
Gate-Emitter Leakage Current : +/- 100 nA
Packaging : Bulk
Power Dissipation : 400 W
Package / Case : 7PM-GA-7


Features:

• UL Certified No. E209204
• Short Circuit rated 10us @ T_C = 100°C, V_GE = 15V
• High Speed Switching
• Low Saturation Voltage : V_CE(sat) = 2.2 V @ I_C = 100A
• High Input Impedance
• Fast & Soft Anti-Parallel FWD


Application

• AC & DC Motor Controls
• General Purpose Inverters
• Robotics
• Servo Controls
• UPS


Specifications

Symbol	Description	FMG1G100US60H	Units
VCES	Collector-Emitter Voltage	600	V
VGES	Gate-Emitter Voltage	+20	V
IC	Collector Current@ TC = 25°C	100	A
ICM(1)	Pulsed Collector Current	200	A
IF	Diode Continuous Forward Current @ TC = 100°C	100	A
IFM	Diode Maximum Forward Current	200	A
TSC	Short Circuit Withstand Time @ TC = 100°C	10	US
PD	Maximum Power Dissipation @ TC = 25°C	400	W
TJ	Operating Junction Temperature	-40 to +150	°C
Tstg	Storage Temperature Range	-40 to +125	°C
Viso	Isolation Voltage @ AC 1minute	2500	V
Mounting Torque	Power Terminals Screw : M5	2.0	N.m
	Mounting Screw : M5	2.0	N.m

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature


Description

Fairchild's Insulated Gate Bipolar Transistor (IGBT)FMG1G100US60H power modules provide low conduction and switching losses as well as short circuit ruggedness. FMG1G100US60H is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.