FMC7G10US60

Packaging :
Configuration : Hex
Collector- Emitter Voltage VCEO Max : 600 V
Continuous Collector Current at 25 C : 10 A
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector-Emitter Saturation Voltage : 2.2 V
Gate-Emitter Leakage Current : 100 nA
Package / Case : PM-AA
Power Dissipation : 36 W


Features:

• UL Certified No. E209204
• Short circuit rated 10us @ T_C = 100°C, V_GE = 15V
• High speed switching
• Low saturation voltage : V_CE(sat) = 2.2 V @ I_C = 10A
• High input impedance
• Built in brake and 3 phase rectifier circuit
• Fast & soft anti-parallel FWD


Application

• AC & DC motor controls
• General purpose inverters
• Robotics
• Servo controls


Specifications

	Symbol	Description	FMC7G10US60	Units
Inverter & Brake	VCES	Collector-Emitter Voltage	600	V
	VGES	Gate-Emitter Voltage	+20	V
	IC	Collector Current@ TC = 25°C	300	A
	ICM(1)	Pulsed Collector Current	600	A
	IF	Diode Continuous Forward Current @ TC = 100°C	300	A
	IFM	Diode Maximum Forward Current	600	A
	TSC	Short Circuit Withstand Time @ TC = 100°C	10	US
	PD	Maximum Power Dissipation @ TC = 25°C	1250	W
Converter	VRRM	Repetitive Peak Reverse Voltage	1200	V
	IO	Average Output Rectified Current	10	V
	IFSM	Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive	100	A
	I2t	1 Cycle Surge Current	41	A2s
Common	TJ	Operating Junction Temperature	-40 to +150	°C
	Tstg	Storage Temperature Range	-40 to +125	°C
	Viso	Isolation Voltage @ AC 1minute	2500	V
MountingTorque		Mounting part Screw @ M4	2.5	N.m

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature


Description

Fairchild's Insulated Gate Bipolar Transistor (IGBT)FMC7G10US60 power modules provide low conduction and switching losses as well as short circuit ruggedness. FMC7G10US60 is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature