IGBT Modules
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Product : | IGBT Silicon Modules | Configuration : | Hex |
Collector- Emitter Voltage VCEO Max : | 600 V | Collector-Emitter Saturation Voltage : | 2.2 V |
Continuous Collector Current at 25 C : | 15 A | Gate-Emitter Leakage Current : | 100 nA |
Power Dissipation : | 45 W | Maximum Operating Temperature : | + 150 C |
Package / Case : | PM-AA |
Symbol | Description | FMC7G10US60 | Units | |
Inverter & Brake |
VCES | Collector-Emitter Voltage | 600 | V |
VGES | Gate-Emitter Voltage | +20 | V | |
IC | Collector Current@ TC = 25°C | 15 | A | |
ICM(1) | Pulsed Collector Current | 30 | A | |
IF | Diode Continuous Forward Current @ TC = 100°C | 15 | A | |
IFM | Diode Maximum Forward Current | 30 | A | |
TSC | Short Circuit Withstand Time @ TC = 100°C | 10 | US | |
PD | Maximum Power Dissipation @ TC = 25°C | 45 | W | |
Converter | VRRM | Repetitive Peak Reverse Voltage | 1200 | V |
IO | Average Output Rectified Current | 20 | V | |
IFSM | Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive |
200 | A | |
I2t | 1 Cycle Surge Current | 164 | A2s | |
Common | TJ | Operating Junction Temperature | -40 to +150 | °C |
Tstg | Storage Temperature Range | -40 to +125 | °C | |
Viso | Isolation Voltage @ AC 1minute | 2500 | V | |
MountingTorque | Mounting part Screw @ M4 | 1.25 | N.m |
Fairchild's Insulated Gate Bipolar Transistor (IGBT)FMC6G15US60 power modules provide low conduction and switching losses as well as short circuit ruggedness. FMC6G15US60 is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.