FMBL1G200US60

Packaging :
Collector- Emitter Voltage VCEO Max : 600 V
Product : IGBT Silicon Modules
Maximum Operating Temperature : + 150 C
Collector-Emitter Saturation Voltage : 2.2 V
Configuration : Single
Power Dissipation : 830 W
Continuous Collector Current at 25 C : 200 A
Gate-Emitter Leakage Current : 100 nA
Package / Case : 7PM-BB


Features:

• UL Certified No. E209204
• Short circuit rated 10us @ T_C = 100°C, V_GE = 15V
• High speed switching
• Low saturation voltage : V_CE(sat) = 2.2 V @ I_C = 200A
• High input impedance
• Fast & soft anti-parallel FWD


Specifications

Symbol	Description	FMBL1G200US60	Units
VCES	Collector-Emitter Voltage	600	V
VGES	Gate-Emitter Voltage	+20	V
IC	Collector Current                              @ TC = 25°C	200	A
ICM(1)	Pulsed Collector Current	400	A
IF	Diode Continuous Forward Current@ TC = 100°C	200	A
IFM	Diode Maximum Forward Current	400	A
TSC	Short Circuit Withstand Time          @ TC = 100°C	10	US
PD	Maximum Power Dissipation             @ TC = 25°C	830	W
TJ	Operating Junction Temperature	-40 to +150	°C
Tstg	Storage Temperature Range	-40 to +125	°C
Viso	Isolation Voltage @ AC 1minute	2500	V
Mounting Torque	Power Terminals Screw : M5	2.0	N.m
	Mounting Screw : M6	2.5	N.m

Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature


Description

Fairchild's Insulated Gate Bipolar Transistor (IGBT)FMBL1G200US60 power modules provide low conduction and switching losses as well as short circuit ruggedness. FMBL1G200US60 is designed for applications such as motor control, uninterrupted power supplies (UPS) and general inverters where short circuit ruggedness is a required feature.