Transistors Bipolar (BJT) PNP Epitaxial Transistor
FMB857B: Transistors Bipolar (BJT) PNP Epitaxial Transistor
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 45 V | ||
Emitter- Base Voltage VEBO : | - 5 V | Maximum DC Collector Current : | 0.5 A | ||
DC Collector/Base Gain hfe Min : | 220 | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SSOT-6 | Packaging : | Reel |
Technical/Catalog Information | FMB857B |
Vendor | Fairchild Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Current - Collector (Ic) (Max) | 550mA |
Power - Max | 700mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500A, 10mA |
Frequency - Transition | - |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | SuperSOT-6 |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | FMB857B FMB857B |