FMB5551

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Configuration : Dual
Maximum Operating Frequency : 300 MHz
Collector- Emitter Voltage VCEO Max : 160 V
DC Collector/Base Gain hfe Min : 80
Maximum DC Collector Current : 0.6 A
Package / Case : SSOT-6


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	160	V
VCBO	Collector-Base Voltage	180	V
VEBO	Emitter-Base Voltage	6	V
IC	Collector Current (continuous)	600	mA
PC	Power Dissipation @Ta = 25°C*	0.7	W
TSTG	Storage Temperature Range	-55 to +150	°C
TJ	Junction Temperature	150	°C
RJA	Thermal Resistance, Junction to Ambient	180	°C/W

* Pd total, for both transistors. For each transistor, Pd = 350mW.


Parameters:

Technical/Catalog Information	FMB5551
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	2 NPN (Dual)
Voltage - Collector Emitter Breakdown (Max)	160V
Current - Collector (Ic) (Max)	600mA
Power - Max	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	SuperSOT-6
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	FMB5551 FMB5551