FMA6A

The FMA6A is designed as one kind of emitter common (dual digital transistors), FMA6A has three points of features:(1)both the DTA144T chip in a UMT or SMT package; (2)ideal for power switching circuits; (3)mounting cost and area can be cut in half. And the structure of this device is epitaxial planar type NPN/ PNP silicon transistor (built-in resistor type).

The absolute maximum ratings of the FMA6A can be summarized as:(1)supply voltage:-50 V;(2)input voltage:-50 V;(3)emitter-base voltage: -5 V;(4)junction temperature:150;(5)storage temperature:-55 to +150;(6)power dissipation (UMC4N):150 mW. And the electrical characteristics of this device can be summarized as:(1)collector-base breakdown voltage: -50 V;(2)collector-emitter breakdown voltage: -50 V;(3)emitter-base breakdown voltage: -5 V;(4)collector cutoff current:-0.5 uA;(5)emitter cutoff current:-0.5 uA;(6)collector-emitter saturation voltage: -0.3 V;(7)DC current transfer ratio: 100 to 600;(8)transition frequency: 250 MHz.

If you want to know more information such as the electrical characteristics about the FMA6A, please download the datasheet in www.seekic.com or www.chinaicmart.com.