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FMA3051

Features: • 35 dB Gain• 30 dBm P1dB Output Power at 6 V, 1.2 A• 40 dBm OIP3• pHEMT Technology• On-chip output power detector• 5 x 3 sq. mm dieApplication• Point-to-point radio• Point-to-multipoint radio• Sat-com• Electronic WarfareSpecifi...

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SeekIC No. : 004342517 Detail

FMA3051: Features: • 35 dB Gain• 30 dBm P1dB Output Power at 6 V, 1.2 A• 40 dBm OIP3• pHEMT Technology• On-chip output power detector• 5 x 3 sq. mm dieApplication• P...

FMA3051 Data Sheet

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Part Number:
FMA3051
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/3/13

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Product Details

Description



Features:

• 35 dB Gain
• 30 dBm P1dB Output Power at 6 V, 1.2 A
• 40 dBm OIP3
• pHEMT Technology
• On-chip output power detector
• 5 x 3 sq. mm die


Application

• Point-to-point radio
• Point-to-multipoint radio
• Sat-com
• Electronic Warfare


Specifications

PARAMETER SYMBOL ABSOLUTE
MAXIMUM
Max Input Power Pin +20dBm
Drain Voltage VDD +10V
Operating Temp Toper -40°C to +85°C
Storage Temp Tstor -55°C to +150°C
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the device.


Description

The FMA3051 is a high performance 12.5-15.5 GHz Gallium Arsenide monolithic amplifier. FMA3051 is suitable for use in point-to-multipoint communications, sat-com and electronic warfare applications. The die is fabricated using the Filtronic 0.25 µm process. The balanced design offers high output power with low return losses. Power detection is achieved with an on-chip coupled detector associated with diode reference voltage. The circuit is DC blocked at both the RF input and the RF output.




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