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FMA219

Specifications Parameter Symbol Test Conditions Min Max Units Supply Voltage VDD For any operating current 6 V Supply Current IDD For VDD < 5V 100 mA RF Input Power PIN For standard bias conditions -5 dBm Storage Temperature TSTG Non-Operating Storage ...

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SeekIC No. : 004342506 Detail

FMA219: Specifications Parameter Symbol Test Conditions Min Max Units Supply Voltage VDD For any operating current 6 V Supply Current IDD For VDD < 5V 100 mA RF Input Power...

FMA219 Data Sheet

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Part Number:
FMA219
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Specifications

Parameter Symbol Test Conditions Min Max Units
Supply Voltage VDD For any operating current   6 V
Supply Current IDD For VDD < 5V   100 mA
RF Input Power PIN For standard bias conditions   -5 dBm
Storage Temperature TSTG Non-Operating Storage -40 150 ºC
Total Power Dissipation PTOT See De-Rating Note below   600 mW
Gain Compression COMP Under any bias conditions   5 dB
Simultaneous Combination of Limits2   2 or more Max. Limits   80 %
• The recommended die attach is conductive epoxy, following the manufacturer's recommended curing procedure.


Description

The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over the 7.0 to 11.0 GHz bandwidth. The amplifier requires a single +3V supply and one off-chip component for supply de-coupling. Both the input and output ports of FMA219 are DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required.




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