FM24CL64

Clearly the strength of higher write endurance and faster writes make FRAM superior to EEPROM in all but one-time programmable applications. The advantage is most obvious in data collection environments where writes are frequent and data must be nonvolatile, but the benefits combine in other ways. A short list of ideas is provided here.

The FM24CL64 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. FM24CL64 provides reliable data retention for 10 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories.

The FM24CL64 performs write operations at bus speed. No write delays are incurred. Data is written to the memory array mere hundreds of nanoseconds after FM24CL64 has been successfully transferred to the device. The next bus cycle may commence immediately. Fast-write time and unlimited read/write endurance make it superior to other types of nonvolatile memory and a good substitute for ordinary SRAM

These capabilities make the FM24CL64 ideal for nonvolatile memory applications requiring frequent or rapid writes. Examples range from data collection where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system.

The FM24CL64 provides substantial benefits to users of serial EEPROM, yet these benefits are available in a hardware drop-in replacement. The FM24CL64 is provided in industry standard 8-pin surface mount package using a familiar two-wire protocol. It is guaranteed over an industrial temperature range of -40°C to +85°C.